EliteSiC Diodes
The EliteSiC Diodes portfolio from onsemi includes AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.
onsemi's portfolio of 1200V EliteSiC diodes
onsemi's portfolio of 1700V EliteSiC diodes
EliteSiC MOSFETs
The EliteSiC MOSFET portfolio from onsemi is designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity.
onsemi's portfolio of 650V EliteSiC MOSFETs
onsemi's portfolio of 900V EliteSiC MOSFETs
onsemi's portfolio of 1200V EliteSiC MOSFETs
Related Technologies
Isolated gate drivers
The portfolio of Gate Drivers from onsemi includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications. onsemi Gate Drivers provide features and benefits that include High system efficiency high reliability.
- NCD57xxx: Isolated High Current and high efficiency IGBT gate driver
- NCV57xxx: Automotive IGBT gate Driver, Isolated high current and high efficiency with internal galvanic isolation
- NCP51705: SiC MOSFET driver, low-side, single 6 A high-speed
- NCV51705: 0 Automotive SiC MOSFET driver, low-side, single 6 A high-speed