650V GaN (Gallium Nitride) HEMTs
ROHM has started with the mass production of 650V GaN (Gallium Nitride) HEMTs GNP1070TC-Z and GNP1150TCA-Z optimized for a wide range of power supply systems applications.
The GNP1070TC-Z and GNP1150TCA-Z deliver industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a figure of merit for GaN HEMTs, translating to higher efficiency in power supply systems. At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability. GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturization of peripheral components.
※RDS(ON)×Ciss / RDS(ON)×Coss:An index for evaluating switching performance, where Ciss refers to the overall capacitance from the input side and Coss does from the output side.The lower this value is, the faster the switching speed and lower loss during switching.
Features
- 650V E-mode GaN FET
- "GNP1150TCA-Z":150mΩ Resistance 2.7nC Gate Charge
- "GNP1070TC-Z":70mΩ Resistance 5.2nC Gate Charge
Applications
- Ideal for a broad range of power supply systems in industrial equipment and consumer devices, including servers and AC adapters
